Fabrication and UV photoresponse characteristics of sol–gel spin-coated n–TiO2/p–Si heterojunction photodetector: the effect of bias voltage

APA

Unknown. (2026) Fabrication and UV photoresponse characteristics of sol–gel spin-coated n–TiO2/p–Si heterojunction photodetector: the effect of bias voltage. Optical and Quantum Electronics.

MLA

Unknown. "Fabrication and UV photoresponse characteristics of sol–gel spin-coated n–TiO2/p–Si heterojunction photodetector: the effect of bias voltage." Optical and Quantum Electronics, 2026.

BibTeX

@article{43e77039,
  title = {Fabrication and UV photoresponse characteristics of sol–gel spin-coated n–TiO2/p–Si heterojunction photodetector: the effect of bias voltage},
  author = {},
  year = {2026},
  journal = {Optical and Quantum Electronics},
}