High sensitivity extended gate effect transistor based on V2O5 nanorods

APA

Unknown. (2017) High sensitivity extended gate effect transistor based on V2O5 nanorods. Journal of Materials Science: Materials in Electronics.

MLA

Unknown. "High sensitivity extended gate effect transistor based on V2O5 nanorods." Journal of Materials Science: Materials in Electronics, 2017.

BibTeX

@article{b73fa0bd,
  title = {High sensitivity extended gate effect transistor based on V2O5 nanorods},
  author = {},
  year = {2017},
  journal = {Journal of Materials Science: Materials in Electronics},
}