RIS

Effect of N 2 and O 2 Anneal Gas Ratio For Low Resistance p-Type ZnO Formation

2006 IEEE International Conference on Semiconductor Electronics(2006)
Citation Formats

APA

Unknown. (2006) Effect of N 2 and O 2 Anneal Gas Ratio For Low Resistance p-Type ZnO Formation. 2006 IEEE International Conference on Semiconductor Electronics.

MLA

Unknown. "Effect of N 2 and O 2 Anneal Gas Ratio For Low Resistance p-Type ZnO Formation." 2006 IEEE International Conference on Semiconductor Electronics, 2006.

BibTeX

@article{5ef5afd3,
  title = {Effect of N 2 and O 2 Anneal Gas Ratio For Low Resistance p-Type ZnO Formation},
  author = {},
  year = {2006},
  journal = {2006 IEEE International Conference on Semiconductor Electronics},
}